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| Silicon(Si) |
Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5 - 8 micron region. The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Silicon is also useful as a transmitter in the 20 micron range.
Two different methods of ingot production are used to obtain a high quality monocrystalline Si substrate material: the Czochralski (Cz) crystal pulling technique, where a seeded crystal is pulled from the melt in a silica crucible and permitted to grow in a mechanically unconstrained environment, permitting precise control of the crystal orientation and shape (standard grade), and the Float Zone (Fz) refining technique (premium hyperpure grade), where a seeded molten zone is supported by surface tension between two vertical cylindrical rods of the material and passed through a heated crucible, re-orientating and refining the crystal through its travel. The most noticeable optical difference between the two grades is the presence of a significantly more pronounced absorption band at approximately 9µm (1110 cm-1) in Cz material, and a reduced absorption profile in premium hyperpure grade (Fz) material beyond 20µm, following the multi-phonon absorption region, where the material exhibits a nearly complete transparency
recovery.
Safetyrich optical selected high quality material to satisfy with customer different request.
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Transmittance Property (Reference Data) |
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| Refractive Index |
Wevelength (µm) |
n |
Wevelength (µm) |
n |
1.40 |
3.49 |
2.05 |
3.45 |
1.50 |
3.48 |
2.50 |
3.44 |
1.66 |
3.47 |
3.5-5.0 |
3.43 |
1.82 |
3.46 |
6.0-25 |
3.42 |
| Optical property |
| Crystal Class |
Cubic |
| Density at 293k ,g/cm3 |
2.329 |
Thermal Conductivity W/(mk)
at 125K
at 313K
at 400K
|
598.6
163
105.1 |
Thermal Expansion 1K
at 75K
at 293K
at 1400K |
-0.5x10-6 2.6x10-6
4.6x10-6 |
| Lattice Constant,Å |
5.43 |
| Molecular Weight |
29.09 |
| Dielectric Constant for 9.37x109Hz |
13 |
| Melting Point,K |
1690 |
Specific Heat,cal/(gK)
at 298K
at 1800 K |
0.18
0.253 |
| Debye Temperature,K |
640 |
| Knoop Hardness,kg/mm2 |
1100 |
| Young's Modulus,GPa |
130.91 |
| Shear Modulus,Gpa |
79.92 |
| Bluk Modulus,GPa |
101.97 |
| Poisson's Ratio |
0.28 |
| Mohs Hardness |
7 |
| Bandgap,eV |
1.1 |
| Water Solubility |
None |
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Si Mirror
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Material |
Silicon |
General |
Precise |
| Dimension Tolerance |
+/-0.1mm |
+/-0.05mm |
| Claer Aperture |
80% |
90% |
| Surface Faltness |
1/4L@
633nm |
1/8L@633nm |
| Surface Quality |
40-20 |
10-5 |
| Coating |
Au |
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Si Mirror |
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Material |
Silicon |
General |
Precise |
| Dimension Tolerance |
+/-0.1mm |
+/-0.05mm |
| Claer Aperture |
80% |
90% |
| Surface Faltness |
1/4L@
633nm |
1/8L@633nm |
| Surface Quality |
40-20 |
10-5 |
| Coating |
Upon customer request
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Si Mirror |
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Material |
Silicon |
General |
Precise |
| Dimension Tolerance |
+/-0.1mm |
+/-0.05mm |
| Claer Aperture |
80% |
90% |
| Surface Faltness |
1/4L@
633nm |
1/8L@633nm |
| Surface Quality |
40-20 |
10-5 |
| Coating |
Upon customer request
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