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  Materials ZnSe
  ZnS
ZnS Multispectral
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Fused Silica
OTHERS
   
Silicon(Si)

Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5 - 8 micron region. The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Silicon is also useful as a transmitter in the 20 micron range.
Two different methods of ingot production are used to obtain a high quality monocrystalline Si substrate material: the Czochralski (Cz) crystal pulling technique, where a seeded crystal is pulled from the melt in a silica crucible and permitted to grow in a mechanically unconstrained environment, permitting precise control of the crystal orientation and shape (standard grade), and the Float Zone (Fz) refining technique (premium hyperpure grade), where a seeded molten zone is supported by surface tension between two vertical cylindrical rods of the material and passed through a heated crucible, re-orientating and refining the crystal through its travel. The most noticeable optical difference between the two grades is the presence of a significantly more pronounced absorption band at approximately 9µm (1110 cm-1) in Cz material, and a reduced absorption profile in premium hyperpure grade (Fz) material beyond 20µm, following the multi-phonon absorption region, where the material exhibits a nearly complete transparency recovery.

Safetyrich optical selected high quality material to satisfy with customer different request.

  Transmittance Property (Reference Data)
 
Refractive Index   
Wevelength (µm)
n
Wevelength (µm)
n
1.40
3.49
2.05
3.45
1.50
3.48
2.50
3.44
1.66
3.47
3.5-5.0
3.43
1.82
3.46
6.0-25
3.42

Optical property
Crystal Class Cubic
Density at 293k ,g/cm3 2.329

Thermal Conductivity  W/(mk)
at 125K
at 313K
at 400K


598.6
163
105.1
Thermal Expansion 1K
at 75K
at 293K
at 1400K

-0.5x10-6
2.6x10-6
4.6x10-6
Lattice Constant,Å 5.43
Molecular Weight 29.09
Dielectric Constant for 9.37x109Hz 13
Melting Point,K 1690
Specific Heat,cal/(gK)
at 298K
at 1800 K

0.18
0.253
Debye Temperature,K 640
Knoop Hardness,kg/mm2 1100
Young's Modulus,GPa 130.91
Shear Modulus,Gpa 79.92
Bluk Modulus,GPa 101.97
Poisson's Ratio 0.28
Mohs Hardness 7
Bandgap,eV 1.1
Water Solubility  None
Si Mirror

       

Material
Silicon
General
Precise
Dimension Tolerance
+/-0.1mm
+/-0.05mm
Claer Aperture
80%
90%
Surface Faltness
1/4L@ 633nm
1/8L@633nm
Surface Quality
40-20
10-5
Coating
Au
 
Si Mirror
 
Material
Silicon
General
Precise
Dimension Tolerance
+/-0.1mm
+/-0.05mm
Claer Aperture
80%
90%
Surface Faltness
1/4L@ 633nm
1/8L@633nm
Surface Quality
40-20
10-5
Coating
Upon customer request
 
Si Mirror
 
Material
Silicon
General
Precise
Dimension Tolerance
+/-0.1mm
+/-0.05mm
Claer Aperture
80%
90%
Surface Faltness
1/4L@ 633nm
1/8L@633nm
Surface Quality
40-20
10-5
Coating
Upon customer request
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